Epitaxial InGaAsP/InP photodiode for registration of InP scintillation
نویسندگان
چکیده
منابع مشابه
Epitaxial InGaAsP/InP photodiode for registration of InP scintillation
Operation of semiconductor scintillators requires optically tight integration of the photoreceiver system on the surface of the scintillator slab. We have implemented an efficient and fast quaternary InGaAsP pin photodiode, epitaxially grown on the surface of an InP scintillator wafer and sensitive to InP luminescence. The diode is characterized by an extremely low room-temperature dark current...
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ژورنال
عنوان ژورنال: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
سال: 2010
ISSN: 0168-9002
DOI: 10.1016/j.nima.2010.07.042